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PDF K4S561633C-P75 Data sheet ( Hoja de datos )

Número de pieza K4S561633C-P75
Descripción 16Mx16 SDRAM 54CSP
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K4S561633C-P75 Hoja de datos, Descripción, Manual

K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16
SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4
December 2002
Rev. 1.4 Dec. 2002

1 page




K4S561633C-P75 pdf
K4S561633C-R(B)L/N/P
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V SS = 0V, TA =Commercial, Extended, Industrial Temperature)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
IC C 1
Burst length = 1
tRC tR C(min)
IO = 0 mA
Version
-75 -1H -1L
Unit
90 85 85 mA
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
ICC2P CKE VIL(max), t CC = 10ns
ICC2PS CKE & CLK VIL(max), t CC =
IC C 2N
CKE VIH(min), CS VIH(min), t CC = 10ns
Input signals are changed one time during 20ns
IC C 2 NS
CKE VIH(min), CLK VIL(max), t CC =
Input signals are stable
0.5
0.5
15
10
mA
mA
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3P CKE VIL(max), t CC = 10ns
ICC3PS CKE & CLK VIL(max), t CC =
IC C 3N
CKE VIH(min), CS VIH(min), t CC = 10ns
Input signals are changed one time during 20ns
IC C 3 NS
CKE VIH(min), CLK VIL(max), t CC =
Input signals are stable
6
6
25
25
mA
mA
mA
Operating Current
(Burst Mode)
IO = 0 mA
ICC4 Page burst
4Banks Activated
tCCD = 2CLKs
Refresh Current
ICC5 tRC tRC (min)
Self Refresh Current
ICC6 CKE 0.2V
-R(B)L
-R(B)N
-R(B)P
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561633C-R(B)L**
4. K4S561633C-R(B)N**
5. K4S561633C-R(B)P**
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
130 130 105 mA
185 185 165 mA
800 uA
Note
1
1
2
3
4
Rev. 1.4 Dec. 2002

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