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Numéro de référence | K4S561632E | ||
Description | 256Mb E-die SDRAM Specification | ||
Fabricant | Samsung semiconductor | ||
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SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
Revision 1.3
September. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 September. 2003
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Pages | Pages 14 | ||
Télécharger | [ K4S561632E ] |
No | Description détaillée | Fabricant |
K4S561632A | 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S561632B | 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S561632C | 256Mbit SDRAM | Samsung |
K4S561632D | 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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