K4S283233F-F75 Datasheet PDF - Samsung semiconductor
| Part Number | K4S283233F-F75 | |
| Description | 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | |
| Manufacturers | Samsung semiconductor | |
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K4S283233F - F(H)E/N/G/C/L/F
Mobile-SDRAM
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
FEATURES
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA with 0.8mm ball pitch
( -FXXX : Leaded, -HXXX : Lead Free).
GENERAL DESCRIPTION
The K4S283233F is 134,217,728 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
Max Freq.
K4S283233F-F(H)E/N/G/C/L/F60
166MHz(CL=3)
K4S283233F-F(H)E/N/G/C/L/F75
133MHz(CL=3)
K4S283233F-F(H)E/N/G/C/L/F1H
105MHz(CL=2)
K4S283233F-F(H)E/N/G/C/L/F1L
105MHz(CL=3)*1
- F(H)E/N/G : Normal / Low/ Low Power, Extended Temperature(-25°C ~ 85°C)
- F(H)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)
Interface
LVCMOS
Package
90 FBGA
Leaded (Lead Free)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
February 2004
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K4S283233F - F(H)E/N/G/C/L/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
Unit Note
-60 -75 -1H -1L
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
100 85 85 80 mA 1
Precharge Standby Current ICC2P CKE ≤ VIL(max), tCC = 10ns
in power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
Precharge Standby Current
in non power-down mode
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC2N Input signals are changed one time during
20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
0.5
mA
0.5
16
mA
8
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC3N Input signals are changed one time during
20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
5
mA
5
26 mA
22 mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
110 85 80 80 mA 1
Refresh Current
ICC5 tRC ≥ tRC(min)
180 160 150 130
-E/C
1500
-N/L 800
Self Refresh Current
ICC6 CKE ≤ 0.2V
-G/F
Internal TCSR
Full Array
1/2 of Full Array
Max 40
500
460
Max 85/70
800
650
1/4 of Full Array
440
550
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C
4. K4S283233F-F(H)E/C**
5. K4S283233F-F(H)N/L**
6. K4S283233F-F(H)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
mA
uA
°C
uA
2
4
5
3
6
February 2004
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K4S283233F-F75 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K4S283233F-F75.PDF Datasheet ] | |
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