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What is K4S281632D-TC75?

This electronic component, produced by the manufacturer "Samsung semiconductor", performs the same function as "128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL".


K4S281632D-TC75 Datasheet PDF - Samsung semiconductor

Part Number K4S281632D-TC75
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Manufacturers Samsung semiconductor 
Logo Samsung semiconductor Logo 


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K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Rev. 0.1
Sept. 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Sept. 2001

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K4S281632D-TC75 equivalent
K4S281632D
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Unit
V
V
°C
W
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
VDD, VDDQ
VIH
VIL
VOH
VOL
ILI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ Max
3.3 3.6
3.0 VDD+0.3
0 0.8
--
- 0.4
- 10
Unit
V
V
V
V
V
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V VIN VDDQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. The VDD condition of K4S281632D-60 is 3.135V~3.6V.
Note
4
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ0 ~ DQ15
Symbol
CCLK
CIN
CADD
COUT
Min
2.5
2.5
2.5
4.0
Max
4.0
5.0
5.0
6.5
Unit Note
pF 1
pF 2
pF 2
pF 3
Notes : 1. -75/7C specify a maximum value of 3.5pF
2. -75/7C specify a maximum value of 3.8pF
3. -75/7C specify a maximum value of 6.0pF
Rev. 0.1 Sept. 2001


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K4S281632D-TC75 electronic component.


Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
K4S281632D-TC75The function is 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL. Samsung semiconductorSamsung semiconductor

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