PDF K4S280432M Data sheet ( Hoja de datos )

Número de pieza	K4S280432M
Descripción	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Fabricantes	Samsung semiconductor
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No Preview Available ! K4S280432M CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 1 page K4S280432M CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating current (One bank active) Precharge standby current in power-down mode Precharge standby current in non power-down mode Symbol Test Condition CAS Latency ICC1 Burst length = 1 tRC ≥ tRC(min) IOL = 0 mA ICC2P ICC2PS ICC2N CKE ≤ VIL(max), tCC = 15ns CKE & CLK ≤ VIL(max), tCC = ∞ CKE ≥ VIH(min),CS ≥ VIH(min),tCC=15ns Input signals are changed one time during 30ns ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable Version Unit Note -80 -1H -1L -10 120 110 110 105 mA 1 1 mA 1 15 mA 7 Active standby current in power-down mode Active standby current in non power-down mode (One bank active) ICC3P ICC3PS ICC3N CKE ≤ VIL(max), tCC = 15ns CKE & CLK ≤ VIL(max), tCC = ∞ CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns. ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 5 5 30 20 mA mA mA Operating current (Burst mode) Refresh current Self refresh current ICC4 ICC5 IOL = 0 mA Page burst tCCD = 2CLKs tRC ≥ tRC(min) ICC6 CKE ≤ 0.2V 3 140 115 115 115 mA 1 2 105 115 105 105 200 165 mA 2 C 1.5 mA 3 L 800 uA 4 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S280432M-C 4. K4S280432M-L Rev. 0.0 Aug. 1999 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
K4S280432A	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S280432B	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S280432C	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S280432D	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor

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