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PDF K4S160822D Data sheet ( Hoja de datos )
| Número de pieza | K4S160822D | |
| Descripción | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K4S160822D
CMOS SDRAM
2Mx8 SDRAM
1M x 8bit x 2 Banks
Synchronous DRAM
LVTTL
Revision 1.0
October 1999
Samsung Electronics reserves the right to change products or specification without notice.
- 1 - Rev. 1.0 (Oct. 1999)
1 page  
K4S160822D
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current (Inputs)
input leakage current (I/O pins)
Symbol
VDD, VDDQ
VIH
VIL
VOH
VOL
ILI
ILO
Min
3.0
2.0
-0.3
2.4
-
-10
-10
Typ Max Unit
3.3 3.6
V
3.0 VDDQ+0.3
V
0 0.8 V
- -V
- 0.4 V
- 10 uA
- 10 uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
Note
1
2
IOH = -2mA
IOL = 2mA
3
3,4
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ0 ~ DQ7
Symbol
CCLK
CIN
CADD
COUT
Min
2.5
2.5
2.5
4.0
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
- 5 - Rev. 1.0 (Oct. 1999)
5 Page 
K4S160822D
FREQUENCY vs. AC PARAMETER RELATIONSHIP TABLE
K4S160822DT-7
Frequency
CAS
Latency
tRC
68ns
tRAS
48ns
tRP
20ns
tRRD
14ns
143MHz (7.0ns)
3
10 7 3 2
125MHz (8.0ns)
3
9632
100MHz (10.0ns)
2
7522
83MHz (12.0ns)
2
6422
75MHz (13.0ns)
2
6422
66MHz (15.0ns)
2
5421
K4S160822DT-8
Frequency
125MHz (8.0ns)
100MHz (10.0ns)
83MHz (12.0ns)
75MHz (13.0ns)
66MHz (15.0ns)
K4S160822DT-H
Frequency
100MHz (10.0ns)
83MHz (12.0ns)
75MHz (13.0ns)
66MHz (15.0ns)
60MHz (16.7ns)
CAS
Latency
3
3
2
2
2
CAS
Latency
2
2
2
2
2
tRC
68ns
9
7
6
6
5
tRC
70ns
7
6
6
5
5
tRAS
48ns
6
5
4
4
4
tRAS
50ns
5
5
4
4
3
tRP
20ns
3
2
2
2
2
tRP
20ns
2
2
2
2
2
tRRD
16ns
2
2
2
2
2
tRRD
20ns
2
2
2
2
2
K4S160822DT-L
Frequency
100MHz (10.0ns)
83MHz (12.0ns)
75MHz (13.0ns)
66MHz (15.0ns)
60MHz (16.7ns)
CAS
Latency
3
2
2
2
2
tRC
70ns
7
6
6
5
5
tRAS
50ns
5
5
4
4
3
tRP
20ns
2
2
2
2
2
tRRD
20ns
2
2
2
2
2
K4S160822DT-10
Frequency
100MHz (10.0ns)
83MHz (12.0ns)
75MHz (13.0ns)
66MHz (15.0ns)
60MHz (16.7ns)
CAS
Latency
3
3
2
2
2
tRC
80ns
8
7
7
6
5
tRAS
50ns
5
5
4
4
3
tRP
26ns
3
3
2
2
2
tRRD
20ns
2
2
2
2
2
- 11
tRCD
20ns
3
3
2
2
2
2
tRCD
20ns
3
2
2
2
2
tRCD
20ns
2
2
2
2
2
tRCD
20ns
2
2
2
2
2
tRCD
26ns
3
3
2
2
2
CMOS SDRAM
tCCD
7ns
1
1
1
1
1
1
(Unit : Number of clock)
tCDL
tRDL
7ns 7ns
11
11
11
11
11
11
(Unit : Number of clock)
tCCD
8ns
1
1
1
1
1
tCCD
10ns
1
1
1
1
1
tCDL
8ns
1
1
1
1
1
tRDL
8ns
1
1
1
1
1
(Unit : Number of clock)
tCDL
tRDL
10ns
10ns
11
11
11
11
11
(Unit : Number of clock)
tCCD
10ns
1
1
1
1
1
tCDL
tRDL
10ns
10ns
11
11
11
11
11
(Unit : Number of clock)
tCCD
10ns
1
1
1
1
1
tCDL
10ns
1
1
1
1
1
tRDL
12ns
2
1
1
1
1
Rev. 1.0 (Oct. 1999)
11 Page | ||
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| PDF Descargar | [ Datasheet K4S160822D.PDF ] | |
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