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PDF JPAD Data sheet ( Hoja de datos )
| Número de pieza | JPAD | |
| Descripción | PICO AMPERE DIODES | |
| Fabricantes | Linear Integrated Systems | |
| Logotipo |  |
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Linear Integrated Systems
PAD SERIES
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS1
BVR ≥ -30V
Crss ≤ 2.0pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (PAD)
300mW
Continuous Power Dissipation (J/SSTPAD)
350mW
Maximum Currents
Forward Current (PAD)
50mA
Forward Current (J/SSTPAD)
10mA
PAD1,2,5
TO-72
BOTTOM VIEW
2K
A 1 3C
JPAD
TO-92
BOTTOM VIEW
KA
12
PAD*
TO-72
BOTTOM VIEW
2 K*
A1
SSTPAD
SOT-23
TOP VIEW
K1
K2
3A
* Cathode tied to Case
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
BVR
Reverse Breakdown
Voltage
ALL PAD
ALL SSTPAD
ALL JPAD
-45
-30
-35
VF Forward Voltage
Crss Total Reverse Capacitance
PAD1,5
All Others
0.8 1.5
0.5 0.8
1.5 2
UNITS
V
pF
CONDITIONS
IR = -1µA
IF = 5mA
VR = -5V, f = 1MHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
PAD2
JPAD2
SSTPAD2
(SST/J)PAD1
-1
(SST/J)PAD2
-2
(SST/J)PAD5
-5
-5
-5
(SST/J)PAD10
-10
-10
-10
IR
Maximum Reverse
Leakage Current2
(SST/J)PAD20
-20
-20
-20
(SST/J)PAD50
-50
-50
-50
(SST/J)PAD100
-100
-100
(SST/J)PAD200
-200
(SST/J)PAD500
-500
UNITS
pA
CONDITIONS
VR = -20V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet JPAD.PDF ] | |
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