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PDF JANTXV2N6798 Data sheet ( Hoja de datos )
| Número de pieza | JANTXV2N6798 | |
| Descripción | POWER MOSFET N-CHANNEL | |
| Fabricantes | International Rectifier | |
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PD-90431D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE - TO-205AF (TO-39)
Product Summary
Part Number BVDSS
IRFF230
200V
RDS(on)
0.40Ω
ID
5.5A
IRFF230
JANTX2N6798
JANTXV2N6798
REF:MIL-PRF-19500/557
200V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry and unique
processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with
high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
5.5
3.5 A
22
25 W
0.20
W/°C
±20 V
207.5
mJ
5.5 A
2.5 mJ
4.5 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/27/15
1 page  
Fig9. MaximumDrainCurrentVs.
CaseTemperature
IRFF230, JANTX2N6798
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet JANTXV2N6798.PDF ] | |
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