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What is JANTXV2N6790?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "POWER MOSFET N-CHANNEL".


JANTXV2N6790 Datasheet PDF - International Rectifier

Part Number JANTXV2N6790
Description POWER MOSFET N-CHANNEL
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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No Preview Available ! JANTXV2N6790 datasheet, circuit

PD - 90427D
IRFF220
JANTX2N6790
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6790
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF220
200V 0.80
ID
3.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
T0-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
3.5
2.25
14
20
0.16
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
0.242
2.2
2.0
5.0
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
08/07/07

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JANTXV2N6790 equivalent
IRFF220, JANTX2N6790, JANTXV2N6790
13 a& b
Fig9. MaximumDrainCurrentVs.
CaseTemperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for JANTXV2N6790 electronic component.


Information Total 7 Pages
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