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Número de pieza | JANTX2N6800 | |
Descripción | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A) | |
Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de JANTX2N6800 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Provisional Data Sheet No. PD-9.432B
JANTX2N6800
HEXFET® POWER MOSFET
JANTXV2N6800
[REF:MIL-PRF-19500/557]
[GENERIC:IRFF330]
N-CHANNEL
400 Volt, 1.0Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6800
JANTXV2N6800
400V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
1.0Ω
ID
3.0A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6800, JANTXV2N6800 Units
3.0
2.0 A
12.0
25 W
0.20
W/K
±20 V
4.0 V/ns
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
oC
g
To Order
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Index
JANTX2N6800, JANTXV2N6800 Device
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Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 13a — Gate Charge Test Circuit
Fig. 13b — Basic Gate Charge Waveform
To Order
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet JANTX2N6800.PDF ] |
Número de pieza | Descripción | Fabricantes |
JANTX2N6800 | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A) | International Rectifier |
JANTX2N6802 | POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A) | International Rectifier |
JANTX2N6804 | TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) | International Rectifier |
JANTX2N6804 | POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) | International Rectifier |
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