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PDF JANSR2N7410 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7410 | |
| Descripción | 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
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JANSR2N7410
Formerly FSL110R4
March 1998
3.5A, 100V, 0.600 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 3.5A, 100V, rDS(ON) = 0.600Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
JANSR2N7410
PACKAGE
TO-205AF
Die Family TA17616.
MIL-PRF-19500/638.
BRAND
JANSR2N7410
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper-
ated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional informa-
tion.
Symbol
Package
TO-205AF
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-94
File Number 4500.1
1 page  
JANSR2N7410
Typical Performance Curves Unless Otherwise Specified (Continued)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
1E-5
1E-4
1E-3
tAV, TIME IN AVALANCHE (ms)
1E-2
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS ≤ 20V
50Ω
tP
0V
50Ω
DUT
+
VDD
-
50V -150V
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VGS = 12V
0V
VDD
RGS
RL
VDS
DUT
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
td(ON)
90%
tr
tOFF
td(OFF)
tf
90%
10%
10%
VGS
10%
50%
PULSE WIDTH
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
2-98
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JANSR2N7410.PDF ] | |
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