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Intersil Corporation - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET

Numéro de référence JANSR2N7401
Description 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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JANSR2N7401 fiche technique
Formerly FSS234R4
JANSR2N7401
August 1998
File Number 4571
6A, 250V, 0.600 Ohm, Rad Hard,
N-Channel Power MOSFET
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numer-
ous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper-
ated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page: http://www.semi.inter-
sil.com. Contact your local Intersil Sales Office for additional
information.
Features
• 6A, 250V, rDS(ON) = 0.600
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up
to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7401
TO-257AA
BRAND
JANSR2N7401
Die Family TA17638.
MIL-PRF-19500/632.
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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