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PDF JANSR2N7400 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7400 | |
| Descripción | 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
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JANSR2N7400
Formerly FSS230R4
June 1998
8A, 200V, 0.440 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 8A, 200V, rDS(ON) = 0.440Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7400
TO-257AA
BRAND
JANSR2N7400
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Die Family TA17637.
MIL-PRF-19500/632.
Symbol
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-58
File Number 4373.1
1 page  
JANSR2N7400
Typical Performance Curves Unless Otherwise Specified (Continued)
50
STARTING TJ = 25oC
10
STARTING TJ = 150oC
IF R = 0
tAV = (L) (IAS) /
(1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) /
1 (1.3 RATED BVDSS - VDD) + 1]
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VGS = 12V
0V
VDD
RGS
RL
VDS
DUT
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
10%
VGS
10%
50%
PULSE WIDTH
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
2-62
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JANSR2N7400.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| JANSR2N7400 | 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| JANSR2N7401 | 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| JANSR2N7402 | 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| JANSR2N7403 | 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET | Intersil Corporation |
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