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PDF JANSR2N7275 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7275 | |
| Descripción | 5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
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JANSR2N7275
Formerly FRL230R4
June 1998
5A, 200V, 0.500 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 5A, 200V, rDS(ON) = 0.500Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
BRAND
JANSR2N7275
TO-205AF
JANSR2N7275
Die family TA17632.
MIL-PRF-19500/604.
Description
The Intersil Corporation has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan-
nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25mΩ. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (no) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page:
http://www.semi.harris.com. Contact your local Intersil
Sales Office for additional information.
Symbol
D
G
Packaging
TO-205AF
S
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-8
File Number 4296.1
1 page  
JANSR2N7275
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANS) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
Gate to Source Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain to Source On Resistance
rDS(ON)
Gate Threshold Voltage
VGS(TH)
NOTES:
4. Or 100% of Initial Reading (whichever is greater).
5. Of Initial Reading.
VGS = ±20V
VDS = 80% Rated Value
TC = 25oC at Rated ID
ID = 1.0mA
±20 (Note 4)
±25 (Note 4)
±20% (Note 5)
±20% (Note 5)
UNITS
nA
µA
Ω
V
Screening Information
TEST
Gate Stress
Pind
Pre Burn-In Tests (Note 6)
Steady State Gate Bias (Gate Stress)
Interim Electrical Tests (Note 6)
Steady State Reverse Bias (Drain Stress)
PDA
Final Electrical Tests (Note 6)
NOTE:
6. Test limits are identical pre and post burn-in.
JANS
VGS = 30V, t = 250µs
Required
MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and Limits Table
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours
5%
MIL-S-19500, Group A,
Subgroups 2 and 3
Additional Screening Tests
PARAMETER
Safe Operating Area
Unclamped Inductive Switching
Thermal Response
Thermal Impedance
SYMBOL
SOA
IAS
∆VSD
∆VSD
TEST CONDITIONS
VDS = 160V, t = 10ms
VGS(PEAK) = 15V, L = 0.1mH
tH = 10ms; VH = 25V; IH = 2A
tH = 500ms; VH = 25V; IH = 1A
MAX
0.65
15
92
190
UNITS
A
A
mV
mV
2-12
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet JANSR2N7275.PDF ] | |
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