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Samsung semiconductor - 128K/256K-bit Serial EEPROM for Low Power

Numéro de référence S524AD0XF1
Description 128K/256K-bit Serial EEPROM for Low Power
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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S524AD0XF1 fiche technique
S524AD0XD1/D0XF1
128K/256K-bit
Serial EEPROM
for Low Power
Data Sheet
OVERVIEW
The S524AD0XD1/D0XF1 serial EEPROM has a 128K/256K-bit (16,384/32,768 bytes) capacity, supporting the
standard I2C™-bus serial interface. It is fabricated using Samsung’s most advanced CMOS technology. It has
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 64 bytes of data into
the EEPROM in a single write operation. Another significant feature of the S524AD0XD1/D0XF1 is its support for
fast mode and standard mode.
FEATURES
I2C-Bus Interface
Two-wire serial interface
Automatic word address increment
EEPROM
128K/256K-bit (16,384/32,768 bytes) storage
area
64-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
EEPROM programming voltage generated
on chip
500,000 erase/write cycles
50 years data retention
Operating Characteristics
Operating voltage
— 1.8 V to 5.5 V
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 400 µA at 5.5 V
— Maximum stand-by current: < 1 µA at 5.5 V
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
Operating clock frequencies
— 400 kHz at standard mode
— 1 MHz at fast mode
Electrostatic discharge (ESD)
— 5,000 V (HBM)
— 500 V (MM)
Packages
8-pin DIP, and TSSOP
8-1

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