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General Semiconductor - SURFACE MOUNT RECTIFIER

Numéro de référence S3K
Description SURFACE MOUNT RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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S3K fiche technique
S3A THRU S3M
SURFACE MOUNT RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
DO-214AB
MODIFIED J-BEND
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.280 (7.11)
0.260 (6.60)
0.245 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.320 (8.13)
0.305 (7.75)
0.008 (0.203)
MAX.
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Built-in strain relief,
ideal for automated placement
Glass passivated chip junction
High temperature soldering:
260°C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounce, 0.25 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS S3A S3B
Device marking code
SA SB
Maximum recurrent peak reverse voltage
VRRM
50 100
Maximum RMS voltage
VRMS
35 70
Maximum DC blocking voltage
VDC 50 100
Maximum average forward rectified current
at TL=75°C (NOTE 3)
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) TL=75°C
IFSM
Maximum instantaneous forward voltage at 2.5A
VF
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
IR
Typical reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RΘJA
RΘJL
Operating junction and storage temperature range TJ, TSTG
S3D S3G S3J
SD SG SJ
200 400 600
140 280 420
200 400 600
3.0
100.0
1.15
10.0
250.0
2.5
60.0
47.0
13.0
-55 to +150
S3K
S3M
UNITS
SK SM
800 1000 Volts
560 700 Volts
800 1000 Volts
Amps
Amps
Volts
µA
µs
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.3 x 0.3” (8.0 x 8.0mm) copper pad areas
4/98

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