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Vishay Telefunken - Silicon NPN Phototransistor

Numéro de référence S350P
Description Silicon NPN Phototransistor
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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S350P fiche technique
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat win-
dow.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with lp > 850nm.
Features
D High radiant sensitivity
D Miniature T–¾ flat plastic package with IR filter
D Very wide angle of half sensitivity ϕ = ± 40°
D Suitable for near infrared radiation
D Suitable for 0.1” (2.54 mm) center–to–center
spacing
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s
S350P
Vishay Telefunken
94 8640
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81543
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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