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IDT71V016S15Y fiches techniques PDF

Integrated Device Technology - 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Numéro de référence IDT71V016S15Y
Description 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
Fabricant Integrated Device Technology 
Logo Integrated Device Technology 





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IDT71V016S15Y fiche technique
3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71V016
Features
Description
64K x 16 advanced high-speed CMOS Static RAM
The IDT71V016 is a 1,048,576-bit high-speed Static RAM
Commercial (0° to +70°C) and Industrial (–40°C to +85°C) organized as 64K x 16. It is fabricated using IDT’s high-perfomance,
Equal access and cycle times
high-reliability CMOS technology. This state-of-the-art technology,
— Commercial and Industrial: 15/20ns
combined with innovative circuit design techniques, provides a
One Chip Select plus one Output Enable pin
cost-effective solution for high-speed memory needs.
Bidirectional data inputs and outputs directly
The IDT71V016 has an output enable pin which operates as fast
LVTTL-compatible
as 7ns, with address access times as fast as 12ns. All bidirectional
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V (±0.3V) power supply
Available in 44-pin Plastic SOJ and 44-pin TSOP
Epackage.
N CFunctional Block Diagram
I N AOutput
T EOE Enable
S SBuffer
inputs and outputs of the IDT71V016 are LVTTL-compatible and
operation is from a single 3.3V supply. Fully static asynchronous circuitry
is used, requiring no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin
Plastic SOJ and 44-pin TSOP Type II.
AR SC 016 IGNA0-A15
Address
Buffers
P LE 71VDESChip
OCS Enable
RBuffer
BS RDE NEWWrite
WE Enable
O OFORBuffer
Row / Column
Decoders
64K x 16
Memory
Array
8
Sense
16 Amps
and
Write
Drivers
8
High
Byte
I/O
Buffer
Low
Byte
I/O
Buffer
I/O15
8
I/O8
I/O7
8
I/O0
BHE
Byte
Enable
Buffers
BLE
©2000 Integrated Device Technology, Inc.
3211 drw 01
AUGUST 2000
1
DSC-3211/08

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