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IMX1 fiches techniques PDF

ROHM Semiconductor - General purpose transistors (dual transistors)

Numéro de référence IMX1
Description General purpose transistors (dual transistors)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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IMX1 fiche technique
Transistors
EMX1 / UMX1N / IMX1
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
!Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!Structure
Epitaxial planar type
NPN silicon transistor
!Equivalent circuit
EMX1 / UMX1N
(3) (2) (1)
Tr1
Tr2
(4) (5) (6)
IMX1
(4) (5) (6)
Tr1
Tr2
(3) (2) (1)
The following characteristics apply to both Tr1 and Tr2.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
7
Collector current
IC 150
Power
EMX1, UMX1N
150 (TOTAL)
dissipation IMX1
PC
300 (TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
55∼+150
Unit
V
V
V
mA
1
mW
2
˚C
˚C
!External dimensions (Units : mm)
EMX1
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : X1
UMX1N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : X1
IMX1
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Abbreviated symbol : X1
1/3

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