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PDF ILD1 Data sheet ( Hoja de datos )
| Número de pieza | ILD1 | |
| Descripción | SURFACE MOUNT LEAD BEND OPTIONS | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ILD1 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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DUAL CHANNEL ILD1/2/5
QUAD CHANNEL ILQ1/2/5
PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Current Transfer Ratio at IF=10 mA
ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
ILD/Q5, 50% Min.
• High Collector-Emitter Voltage
ILD/Q1: BVCEO=50 V
ILD/Q2, ILD/Q5: BVCEO=70 V
• Field-Effect Stable by TRansparent IOn
Shield (TRIOS) Isolation Test Voltage, 5300
VACRMS
• Underwriters Lab File #E52744
•
V
DE
VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage ................................................6 V
Forward Current ...........................................60 mA
Surge Current ................................................. 2.5 A
Power Dissipation.......................................100 mW
Derate Linearly from 25°C..................... 1.3 mW/°C
Detector
Collector-Emitter Reverse Voltage
ILD/Q1 ........................................................... 50 V
ILD/Q2, ILD/Q5...............................................70 V
Collector Current .......................................... 50 mA
Collector Current (t<1 ms)...........................400 mA
Power Dissipation.......................................200 mW
Derate Linearly from 25°C......................2.6 mW/°C
Package
Isolation Test Voltage (between
emitter and detector referred to
standard climate 23°C/50%RH,
DIN 50014) .................................... 5300 VACRMS
Creepage ............................................... min. 7 mm
Clearance............................................... min. 7 mm
Isolation Resistance
VIO=500 V, TA=25°C ......................... RIO=1012 Ω
VIO=500 V, TA=100°C ....................... RIO=1011Ω
Package Power Dissipation ...................... 250 mW
Derate Linearly from 25°C..................... 3.3 mW/°C
Storage Temperature................... –40°C to +150°C
Operating Temperature ................–40°C to +100°C
Junction Temperature.................................... 100°C
Soldering Temperature
(2 mm from case bottom) .......................... 260°C
Dimensions in inches (mm)
Dual Channel
43
Pin One I.D.
21
.268 (6.81)
.255 (6.48)
Anode 1
Cathode 2
8 Emitter
7 Collector
56 78
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
Cathode 3
Anode 4
6 Collector
5 Emitter
.305 Typ.
(7.75) Typ.
4° Typ.
.022 (.56)
.018 (.46)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10° Typ.
.135 (3.43)
.115 (2.92)
3°–9°
.012 (.30)
.008 (.20)
Quad Channel
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
Pin One I.D. Anode 1
16 Emitter
Cathode 2
15 Collector
Cathode 3
14 Collector
Anode 4
13 Emitter
Anode 5
12 Emitter
Cathode 6
11 Collector
Cathode 7
10 Collector
Anode 8
9 Emitter
.150 (3.81)
.130 (3.30)
.305 Typ.
(7.75) Typ.
4° Typ.
.022 (.56)
.018 (.46)
.100 (2.54) Typ.
.040 (1.02)
.030 (.76 )
10° Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
DESCRIPTION
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared
LEDs and silicon NPN phototransistor. Signal information, including a DC
level, can be transmitted by the drive while maintaining a high degree of
electrical isolation between input and output. The ILD/Q1/2/5 are especially
designed for driving medium-speed logic and can be used to eliminate trou-
blesome ground loop and noise problems. Also these couplers can be
used to replace relays and transformers in many digital interface applica-
tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a
single DIP package and the ILQ1/2/5 has four isolated channels per pack-
age.
See Appnote 45, “How to Use Optocoupler Normalized Curves.”
5–1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ILD1.PDF ] | |
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