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PDF KTC3072D Data sheet ( Hoja de datos )
| Número de pieza | KTC3072D | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
FEATURES
Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
Note 1: Pulse Width 100mS, Duty Cycle 30%
RATING
40
20
7
5
8
1.0
150
-55 150
UNIT
V
V
V
A
W
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2
E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2
J 0.5+_ 0.1
L K 2.0+_ 0.2
L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage (1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)(Note1)
hFE(2)
VCE(sat)
fT
IC=100 A, IE=0
IC=1mA, IB=0
IE=10 A, IC=0
VCB=20V, IE=0
VEB=7V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=3A, IB=60mA(Pulse)
VCE=6V, IC=50mA
Collector Output Capacitance
Cob VCB=20V, f=1MHz, IE=0
Note 1 : hFE(1) Classification O:120 240, Y:200 400, GR:350 700
2003. 3. 27
Revision No : 3
IPAK
MIN.
40
20
7
-
-
120
100
-
20
-
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
UNIT
V
V
V
nA
nA
V
MHz
pF
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTC3072D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KTC3072D | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO) | KEC(Korea Electronics) |
| KTC3072D | EPITAXIAL PLANAR NPN TRANSISTOR |  KEC |
| KTC3072L | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO) | KEC(Korea Electronics) |
| KTC3072L | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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