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Numéro de référence | KST64 | ||
Description | Darlington Transistor | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
KST63/64
Darlington Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCES
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
-30
-30
-10
-500
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCES
ICBO
IEBO
hFE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KST63
: KST64
: KST63
: K ST64
IC= -100, VBE=0
VCE= -30V, IE=0
VEB= -10V, IC=0
VCE= -5V, IC= -10mA
VCE= -5V, IC= -100mA
VCE (sat)
VBE (on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse test: PW≤300µs, Duty Cycle≤2%
IC= -100mA, IB= -0.1mA
VCE= -5V, IC= -100mA
VCE= -5V, IC= -10mA
f=100MHz
Min.
-30
Max.
-100
-100
Units
V
nA
nA
5K
10K
10K
20K
-1.5 V
-2.0 V
125 MHz
Marking Code
Type
Mark
KST63
2U
KST64
2V
Marking
2U
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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Pages | Pages 4 | ||
Télécharger | [ KST64 ] |
No | Description détaillée | Fabricant |
KST63 | Darlington Transistor | Fairchild Semiconductor |
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