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PDF KST4403 Data sheet ( Hoja de datos )
| Número de pieza | KST4403 | |
| Descripción | Switching Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KST4403
Switching Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
-40
-40
-5
-600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
IBEV
ICEX
hFE
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
DC Current Gain
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
IC= -0.1mA, IE=0
IC= -1.0mA, IB=0
IE= -0.1mA, IC=0
VCE= -35V, VBE= -0.4V
VCE= -35V, VBE= -0.4V
VCE= -1V, IC= -0.1mA
VCE= -1V, IC= -1.0mA
VCE= -1V, IC= -10mA
*VCE= -2V, IC= -150mA
*VCE= -2V, IC= -500mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -20mA, VCE= -10V
f=100MHz
Cob Output Capacitance
VCB= -10V, IE=0
f=140KHz
tON Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
VCC= -30V, VBE= -2V
IC= -150mA, IB1= -15mA
VCC= -30V, IC= -150mA
IB1=IB2= -15mA
Marking
Min.
-40
-40
-5
30
60
100
100
20
-0.75
200
Max.
-0.1
-0.1
300
-0.4
-0.75
-0.95
-1.3
Units
V
V
V
µA
µA
V
V
V
V
MHz
8.5 pF
35 ns
255 ns
2T
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KST4403.PDF ] | |
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