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PDF KST4125 Data sheet ( Hoja de datos )
| Número de pieza | KST4125 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KST4125
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
TSTG
Storage Temperature
• Refer to KST3906 for graphs
Value
-30
-30
-4
-200
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE (sat)
VBE (sat)
fT
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC= -10µA, IE=0
IC= -1mA, IE=0
IE= -10µA, IC=0
VCB= -20V, IE=0
VEB= -3V, IC=0
VCE= -1V, IC= -2.0mA
VCE= -1V, IC= -50mA
IC= -50mA, IB= -5.0mA
IC= -50mA, IB= -5.0mA
IC= -10mA, VCE= -20V
f=100MHz
Cob Output Capacitance
NF Noise Figure
* Pulse Test: PW≤300µs, Duty Cycle≤2%
VCB= -5V, IE=0, f=100KHz
IC= -100µA, VCE= -5V
RS=1KΩ
f=10Hz to 15.7KHz
Min. Max. Units
-30 V
-30 V
-4 V
-50 nA
-50 nA
50 150
25
-0.4 V
-0.95
V
200 MHz
4.5 pF
5 dB
Marking
ZD
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KST4125.PDF ] | |
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