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PDF KST3906 Data sheet ( Hoja de datos )
| Número de pieza | KST3906 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KST3906
General Purpose Transistor
3
PNP Epitaxial Silicon Transistor
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
-40
-40
-5
-200
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICEX
hFE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
Test Condition
IC= -10µA, IE=0
IC= -1.0mA, IB=0
IE=10µA, IC=0
VCE= -30V, VEB= -3V
VCE= -1V, IC= -0.1mA
VCE= -1V, IC= -1mA
VCE= -1V, IC= -10mA
VCE= -1V, IC= -50mA
VCE= -1V, IC= -100mA
VCE (sat)
VBE (sat)
fT
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5.0mA
IC= -10mA, IB= -1.0mA
IC= -50mA, IB= -5.0mA
IC= -10mA, VCE= -20V
f=100MHz
Cob Output Capacitance
NF Noise Figure
VCB= -5V, IE=0, f=1.0MHz
IC= -100µA, VCE= -5V
RS=1KΩ
f=10Hz to 15.7KHz
tON Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
VCC= -3V, VBE= -0.5V
IC= -10mA, IB1= -1mA
VCC= -3V, IC= -10mA
IB1=IB2= -1mA
Min.
-40
-40
-5
60
80
100
60
30
-0.65
250
Max.
-50
300
-0.25
-0.4
-0.85
-0.95
Units
V
V
V
nA
V
V
V
V
MHz
4.5 pF
4 dB
70 ns
300 ns
Marking
2A
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KST3906.PDF ] | |
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