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PDF KSP92 Data sheet ( Hoja de datos )
| Número de pieza | KSP92 | |
| Descripción | High Voltage Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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High Voltage Transistor
KSP92/93
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSP92
: KSP93
VCEO
Collector-Emitter Voltage
: KSP92
: KSP93
VEBO
IC
PC
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25°C)
Derate above 25°C
PC Collector Power Dissipation (TC=25°C)
Derate above 25°C
TJ
TSTG
Junction Temperature
Storage Temperature
1 TO-92
1. Emitter 2. Base 3. Collector
Value
-300
-200
-300
-200
-5
-500
625
5
1.5
12
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
mW/°C
W
mW/°C
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
: KSP92
: KSP93
Test Condition
IC= -100µA, IE=0
BVCEO
* Collector-Emitter Breakdown Voltage
: KSP92
: KSP93
IC= -1mA, IB=0
BVEBO
ICBO
IEBO
hFE
Emitter-Base Breakdown Voltage
Collector Cur-off Current
: KSP92
: KSP93
Emitter Cut-off Current
* DC Current Gain
VCE (sat) *Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
: KSP92
: KSP93
* Pulse Test: PW≤300µs, Duty Cycle≤2%
IE= -100µA, IC=0
VCB= -200V, IE=0
VCB= -160V, IE=0
VEB= -3V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
IC= -20mA, IB= -2mA
IC= -20mA, IB= -2mA
VCE= -20V, IC= -10mA, f=100MHz
VCB= -20V, IE=0
f=1MHz
Min.
-300
-200
-300
-200
-5
25
40
25
50
Max. Units
V
V
V
V
V
-0.25
-0.25
-0.10
µA
µA
µA
-0.50
-0.90
6
8
V
V
MHz
pF
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSP92.PDF ] | |
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