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PDF KSP5179 Data sheet ( Hoja de datos )
| Número de pieza | KSP5179 | |
| Descripción | High Frequency Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KSP5179
High Frequency Transistor
1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25°C)
Derate above 25°C
PC Collector Power Dissipation (TC=25°C)
Derate above 25°C
TJ
TSTG
Junction Temperature
Storage Temperature
Value
20
12
2.5
50
200
1.6
300
2.4
150
-55 ~ 150
Units
V
V
V
mA
mW
mW/°C
mW
mW/°C
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO (sus)
BVCBO
BVEBO
ICBO
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
hFE
VCE (sat)
VBE (sat)
fT
Cob
hfe
Cc ⋅ rbb’
NF
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Collector Base Time Constant
Noise Figure
IC=3mA, IB=0
IC=10µA, IE=0
IE=10µA, IC=0
VCB=15V, IE=0
VCB=15V, IE=0, Ta=150°C
VCB=1V, IC=3mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=6V, IC=5mA
VCB=10V, IE=0, f=0.1 to1 MHz
VCE=6V, IC=2mA, f=1KHz
VCE=6V, IE=2mA, f=31.9MHz
VCE=6V, IC=1.5mA, f=200MHz
RS=50Ω
Min.
12
20
2.5
25
900
25
3
Max.
0.02
1
250
0.4
1
2000
1
300
14
4.5
Units
V
V
V
µA
µA
V
V
MHz
pF
ps
dB
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KSP5179.PDF ] | |
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