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PDF KSP13 Data sheet ( Hoja de datos )
| Número de pieza | KSP13 | |
| Descripción | Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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Hay una vista previa y un enlace de descarga de KSP13 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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KSP13/14
Darlington Transistor
• Collector-Emitter Voltage: VCES=30V
• Collector Power Dissipation: PC (max)=625mW
1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCES
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
30
10
500
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCES
ICBO
IEBO
hFE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KSP13
: KSP14
: KSP13
: KSP14
IC=100µA, IB=0
VCB=30V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE (sat)
VBE (on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
f=100MHz
Min.
30
5K
10K
10K
20K
125
Max.
100
100
Units
V
nA
nA
1.5 V
2.0 V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSP13.PDF ] | |
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