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Numéro de référence | KSH30C | ||
Description | General Purpose Amplifier Low Speed Switching Applications | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
KSH30/30C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP30 and TIP30C
1 D-PAK 1 I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: KSH30
: KSH30C
Value
- 40
- 100
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage
: KSH30
: KSH30C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
- 40
- 100
-5
-1
-3
- 0.4
15
1.56
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
Collector-Emitter Sustaining Voltage
: KSH30
: KSH30C
Collector Cut-off Current
: KSH30
: KSH30C
Collector Cut-off Current
: KSH30
: KSH30C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Test Condition
IC = - 30mA, IB = 0
VCE = - 40V, IB = 0
VCE = - 60V, IB = 0
VCE = - 40V, VBE = 0
VCE = 100V, VBE = 0
VBE = - 5V, IC = 0
VCE = - 4V, IC = - 0.2A
VCE = - 4V, IC = - 1A
IC = - 1A, IB = - 125mA
VCE = - 4A, IC = - 1A
VCE = - 10V, IC = - 200mA
Min.
- 40
- 100
40
15
3
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
- 50 µA
- 50 µA
- 20 µA
- 20 µA
- 1 mA
75
- 0.7
- 1.3
V
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
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Pages | Pages 5 | ||
Télécharger | [ KSH30C ] |
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