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Fairchild Semiconductor - D-PAK for Surface Mount Applications

Numéro de référence KSH200
Description D-PAK for Surface Mount Applications
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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KSH200 fiche technique
KSH200
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
1 D-PAK 1 I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IB
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC = 25°C)
Collector Dissipation (Ta = 25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCBO(sus)
ICEO
ICBO
IEBO
hFE
VCE (sat)
* Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
VBE (sat)
* Base-Emitter Saturation Voltage
VBE (on)
* Base-Emitter On Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test: PW300µs, Duty Cycle2%
IC=100mA, IB=0
VCB=40V, IE=0
VEBO=8V, IC=0
VCE=1V, IC=500mA
VCE=1V, IC=2A
VCE=2V, IC=5A
IC=500mA, IB=50mA
IC=2A, IB=200mA
IC=5A, IB=1A
IC=5A, IB=2A
VCE=1V, IC=2A
VCE=10V, IC=100mA
VCB=10V, IE=0, f=0.1MHz
Value
40
25
8
1
5
10
12.5
1.4
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
25
70
45
10
65
Max.
100
100
Units
V
nA
nA
180
0.3
0.75
1.8
2.5
1.6
80
V
V
V
V
V
MHz
pF
©2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002

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