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PDF KSE210 Data sheet ( Hoja de datos )
| Número de pieza | KSE210 | |
| Descripción | Feature | |
| Fabricantes | Fairchild Semiconductor | |
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Hay una vista previa y un enlace de descarga de KSE210 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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KSE210
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.)
• Complement to KSE200
1 TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
- 40
- 25
-8
-5
15
150
- 65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC = - 10mA, IB = 0
VCB = -40V, IE = 0
VCB = - 40V, IE =0 @ TJ = 125°C
VBE = - 8V, IC = 0
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
IC = - 500mA, IB = - 50mA
IC = - 2A, IC = - 200mA
IC = - 5A, IB = - 1A
IC = - 5A, IB = - 1A
VCE = - 1V, IC = - 2A
VCE = - 10V, IC = - 100mA
VCB = - 10V, IE = 0, f = 1MHz
Min.
-25
70
45
10
65
Max.
-100
-100
-100
Units
V
nA
µA
nA
180
-0.3
-0.75
-1.8
-2.5
-1.6
120
V
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSE210.PDF ] | |
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