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PDF KSD227 Data sheet ( Hoja de datos )
| Número de pieza | KSD227 | |
| Descripción | Low Frequency Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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Hay una vista previa y un enlace de descarga de KSD227 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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KSD227
Low Frequency Power Amplifier
• Complement to KSA642
• Collector Power Dissipation : PC=400mW
1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
30
25
5
300
400
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
IC=100µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
IC=300mA, IB=30mA
Min.
30
25
5
70
Typ.
0.14
Max.
0.1
0.1
400
0.4
Units
V
V
V
µA
µA
V
hFE Classification
Classification
hFE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSD227.PDF ] | |
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