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PDF KSD2058 Data sheet ( Hoja de datos )
| Número de pieza | KSD2058 | |
| Descripción | Low Frequency Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSD2058
Low Frequency Power Amplifier
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
VCEO
hFE
VCE(Sat)
VBE(on)
fT
Cob
tON
tSTG
tF
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
VCB = 60V, IE = 0
VEB = 7V, IC = 0
IC = 50mA, IB = 0
VCE = 5V, IC = 0.5A
IC = 2A, IB = 0.2A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 30V, IC = 2A
IB1 = - IB2 = 0.2A
RL = 15Ω
hFE Classification
Classification
hFE
O
60 ~ 120
Y
100 ~ 200
Value
60
60
7
3
0.5
1.5
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Min.
60
8
Typ.
3
35
0.65
1.3
0.65
Max.
10
1
Units
µA
mA
V
1.5 V
V
0.4 MHz
pF
µs
µs
µs
G
150 ~ 300
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSD2058.PDF ] | |
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