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What is KSD1692?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "NPN Silicon Darlington Transistor".


KSD1692 Datasheet PDF - Fairchild Semiconductor

Part Number KSD1692
Description NPN Silicon Darlington Transistor
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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KSD1692
Feature
• High Dc Durrent Gain
• Low Collector Saturation Voltage
• Built-in a Damper Diode at E-C
• High Power Dissipation : PC = 1.3W (Ta=25°C)
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym-
bol
Parameter
Value
Units
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
PC Collector Dissipation (Ta=25°C)
P C Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG Storage Temperature
* PW10ms, duty Cycle50%
150
100
8
3
5
1.3
15
150
- 55 ~ 150
V
V
V
A
A
A
W
W
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(sat) *Base-Emitter Saturation Voltage
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW350µs, duty Cycle2% Pulsed
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 1.5A
VCE = 2V, IC = 3A
IC = 1.5A, IB = 1.5mA
IC = 1.5A, IB = 1.5mA
VCC = 40V, IC = 1.5A
IB1 = - IB2 = 1.5mA
RL = 27
Min.
2K
1K
Typ.
0.9
1.5
0.5
2
1
Max.
10
2
20K
Units
µA
mA
1.2 V
2V
µs
µs
µs
hFE Classificntion
Classification
hFE1
O
2000 ~ 5000
Y
4000 ~ 12000
G
6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KSD1692 electronic component.


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