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PDF KSD1406 Data sheet ( Hoja de datos )
| Número de pieza | KSD1406 | |
| Descripción | Low Frequency Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSD1406
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1015
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
60
60
7
3
0.5
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
IC = 50mA, IB = 0
VCB = 60V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 30V, IC = 1A
IB1 = -IB2 = 0.2A
RL = 30Ω
Min.
60
60
20
Typ.
0.4
0.7
3
70
0.8
1.5
0.8
Max.
100
100
300
Units
V
µA
µA
1V
1V
MHz
pF
µs
µs
µs
hFE1 Classification
Classification
hFE1
O
60 ~ 120
Y
100 ~ 200
G
150 ~ 300
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSD1406.PDF ] | |
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