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Numéro de référence | KSD1021 | ||
Description | Audio Frequency Power Amplifier | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
KSD1021
Audio Frequency Power Amplifier
• Complement to KSB811
• Collector Current : IC=1A
• Collector Dissipation : PC=350mW
1 TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
40
30
5
1
350
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Band Width Product
Output Capacitance
IC=100µA, IE=0
IC=10mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VCE=1V, IC=100mA
IC=1A, IB=0.1A
IC=1A, IB=0.1A
VCE=6V, IC=10mA
VCB=6V, IE=0, f=1MHz
Min.
40
30
5
70
Typ.
130
16
Max.
0.1
400
0.5
1.2
Units
V
V
V
µA
V
V
MHz
pF
hFE Classification
Classification
hFE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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Pages | Pages 4 | ||
Télécharger | [ KSD1021 ] |
No | Description détaillée | Fabricant |
KSD1020 | Audio Frequency Amplifier | Fairchild Semiconductor |
KSD1021 | Audio Frequency Power Amplifier | Fairchild Semiconductor |
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