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Número de pieza | KSC5504DT | |
Descripción | High Voltage High Speed Power Switch Application | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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High Voltage High Speed Power Switch
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D2-PAK or TO-220
Equivalent Circuit
C
B
D2-PAK
1
TO-220
E1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
V CEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
IBP *Base Current (Pulse)
PC Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
EAS Avalanche Energy(Tj=25°C)
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Value
1200
600
12
4
8
2
4
75
150
- 65 ~ 150
3
Units
V
V
V
A
A
A
A
W
°C
°C
mJ
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
TL Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
Rating
1.65
62.5
270
Unit
°C/W
°C
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page Typical Characteristics (Continued)
10
I =5I
CB
10
1
T = 25 oC
j
T = 125 oC
j
0.1
1m
10m
100m
1
I [A] , CO LLE CTO R CURRE NT
C
Figure 7. Base-Emitter Saturation Voltage
10k
1k
100
C ib
Cob
f = 1 MHz
10
1
10 100
REVERSE VOLTAGE [V]
Figure 9. Collector Output Capacitance
1000
500
I =5I =5I
C B1 B2
V = 15 V
CC
V = 300 V
Z
L = 200 uH
C
T = 125 oC
j
T = 25 oC
j
100
0.5
1
I [A] , CO LLECTO R CURRENT
C
3
Figure 11. Inductive Switching Time, tfi
©2001 Fairchild Semiconductor Corporation
1 T j = 25 oC
T j = 125 oC
0.1
1m
10m
100m
1
IC [A ] , COLLECT OR C UR REN T
Figure 8. Diode Forward Voltage
10
T = 125 oC
j
5
I =5I =5I
C B1 B2
V = 15 V
CC
V = 300 V
Z
L = 200 uH
C
T = 25 oC
j
1
0.5
1
I [A], CO LLECTO R CURRENT
C
3
Figure 10. Inductive Switching Time, tsi
3000
1000
I =5I =5I
C B1 B2
V = 15 V
CC
V = 300 V
Z
L = 200 uH
C
T = 125 oC
j
T = 25 oC
j
100
0.5
1
I [A] , COLLECTO R CURRENT
C
3
Figure 12. Inductive Switching Time, tc
Rev. A1, June 2001
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet KSC5504DT.PDF ] |
Número de pieza | Descripción | Fabricantes |
KSC5504D | High Voltage High Speed Power Switch Application | Fairchild Semiconductor |
KSC5504DT | High Voltage High Speed Power Switch Application | Fairchild Semiconductor |
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