DataSheet.es    


PDF KSC5504D Data sheet ( Hoja de datos )

Número de pieza KSC5504D
Descripción High Voltage High Speed Power Switch Application
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de KSC5504D (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! KSC5504D Hoja de datos, Descripción, Manual

KSC5504D/KSC5504DT
High Voltage High Speed Power Switch
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D2-PAK or TO-220
Equivalent Circuit
C
B
D2-PAK
1
TO-220
E1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
V CEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
IBP *Base Current (Pulse)
PC Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
EAS Avalanche Energy(Tj=25°C)
* Pulse Test : Pulse Width = 5ms, Duty Cycle 10%
Value
1200
600
12
4
8
2
4
75
150
- 65 ~ 150
3
Units
V
V
V
A
A
A
A
W
°C
°C
mJ
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
TL Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
Rating
1.65
62.5
270
Unit
°C/W
°C
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

1 page




KSC5504D pdf
Typical Characteristics (Continued)
10
I =5I
CB
10
1
T = 25 oC
j
T = 125 oC
j
0.1
1m
10m
100m
1
I [A] , CO LLE CTO R CURRE NT
C
Figure 7. Base-Emitter Saturation Voltage
10k
1k
100
C ib
Cob
f = 1 MHz
10
1
10 100
REVERSE VOLTAGE [V]
Figure 9. Collector Output Capacitance
1000
500
I =5I =5I
C B1 B2
V = 15 V
CC
V = 300 V
Z
L = 200 uH
C
T = 125 oC
j
T = 25 oC
j
100
0.5
1
I [A] , CO LLECTO R CURRENT
C
3
Figure 11. Inductive Switching Time, tfi
©2001 Fairchild Semiconductor Corporation
1 T j = 25 oC
T j = 125 oC
0.1
1m
10m
100m
1
IC [A ] , COLLECT OR C UR REN T
Figure 8. Diode Forward Voltage
10
T = 125 oC
j
5
I =5I =5I
C B1 B2
V = 15 V
CC
V = 300 V
Z
L = 200 uH
C
T = 25 oC
j
1
0.5
1
I [A], CO LLECTO R CURRENT
C
3
Figure 10. Inductive Switching Time, tsi
3000
1000
I =5I =5I
C B1 B2
V = 15 V
CC
V = 300 V
Z
L = 200 uH
C
T = 125 oC
j
T = 25 oC
j
100
0.5
1
I [A] , COLLECTO R CURRENT
C
3
Figure 12. Inductive Switching Time, tc
Rev. A1, June 2001

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet KSC5504D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
KSC5504DHigh Voltage High Speed Power Switch ApplicationFairchild Semiconductor
Fairchild Semiconductor
KSC5504DTHigh Voltage High Speed Power Switch ApplicationFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar