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What is KSC5502DT?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "NPN Triple Diffused Planar Silicon Transistor".


KSC5502DT Datasheet PDF - Fairchild Semiconductor

Part Number KSC5502DT
Description NPN Triple Diffused Planar Silicon Transistor
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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Total 11 Pages



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July 2014
KSC5502D / KSC5502DT
NPN Triple Diffused Planar Silicon Transistor
Features
• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D-PAK or TO-220
Equivalent Circuit
C
B
D-PAK
1
TO-220
4
4
E1
1.Base 2,4.Collector 3.Emitter
Ordering Information
Part Number
KSC5502DTM
KSC5502DTTU
Top Mark
C5502D
C5502D
Package
TO-252 3L (DPAK)
TO-220 3L
Packing Method
Tape and Reel
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
TJ
TSTG
EAS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)(1)
Base Current (DC)
Base Current (Pulse)(1)
Junction Temperature
Storage Temperature Range
Avalanche Energy (TJ = 25°C)
1200
600
12
2
4
1
2
150
-65 to 150
2.5
V
V
V
A
A
A
A
°C
°C
mJ
Note:
1. Pulse test: Pulse width = 5 ms, duty cycle 10%.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com

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KSC5502DT equivalent
Typical Performance Characteristics (Continued)
10
I =5I
CB
10
1
T =25oC
J
T =125oC
J
0.1
1m
10m
100m
I [A], COLLECTOR CURRENT
C
1
Figure 7. Base-Emitter Saturation Voltage
1000
C
ib
F=1M H z
100
C
ob
10
1
10 100
REVERSE VOLTAGE[V]
Figure 9. Collector Output Capacitance
5
4.5
4 I =5I =2I
C B1 B2
V =300V
3.5 CC
PW =20μs
3
2.5
2
T =125oC
J
T =25oC
1.5 J
1
0.3 0 .5
1 1.5 2 2.5 3
I [A], COLLECTOR CURRENT
C
Figure 11. Resistive Switching Time, toff
1
T =25oC
J
T =125oC
J
0.1
1m
10m
100m
I [A], FORW ARD CURRENT
FD
1
Figure 8. Diode Forward Voltage
2000
1000
900
800
700
600
500
400
300
200
I =5I =2I
C B1 B2
V =300V
CC
PW=20μ s
T =125oC
J
T =25oC
J
100
0.3
0.5 1 1.5 2
I [A], COLLECTOR CURRENT
C
2.5 3
Figure 10. Resistive Switching Time, ton
2000
1000
900
800
700
600
500
400
300
I =5I =5I
C B1 B2
V =300V
c
PW =20μs
200
T =125oC
J
T =25oC
J
100
0.3
0.5 1 1.5 2
I [A], COLLECTOR CURRENT
C
2.5 3
Figure 12. Resistive Switching Time, ton
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
5
www.fairchildsemi.com


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