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PDF KSC5367F Data sheet ( Hoja de datos )
| Número de pieza | KSC5367F | |
| Descripción | High Voltage and High Reliability | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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KSC5367F
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
• High Collector-Base Voltage
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Curren (Pulse)
IB Base Current (DC)
IBP *Base Current (Pulse)
PC Power Dissipation(TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Value
1600
800
12
3
6
2
4
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
Rating
3.1
62.5
Unit
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
1 page  
Package Dimensions
TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
#1
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B1, December 2002
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KSC5367F.PDF ] | |
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