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PDF KSC5338DW Data sheet ( Hoja de datos )
| Número de pieza | KSC5338DW | |
| Descripción | High Voltage Power Switch Switching Application | |
| Fabricantes | Fairchild Semiconductor | |
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KSC5338D/KSC5338DW
High Voltage Power Switch Switching
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D2-PAK
Equivalent Circuit
C
B
D2-PAK
1
TO-220
E1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
IBP *Base Current (Pulse)
PC Power Dissipation(TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Value
1000
450
12
5
10
2
4
75
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
TL Maximun Lead Temperature for Soldering
Rating
1.65
62.5
270
Unit
°C/W
°C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page  
Typical Characteristics (Continued)
10
IC = 10IB
1 Tj = -25OC
Tj = +25OC
Tj = 125OC
0.1
1E-3
0.01
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 7. Base-Emitter Saturation Voltage
500
di/dt = 10A/µS
TC = 25OC
450
400
350
300
250
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
IF[A], FORWARD CURRENT
Figure 9. Forward Recovery Time
5
IBon = IBoff
VCC = 15V
VZ = 300V
LC = 200µH
4
IC = 2A @ Tj=125OC
IC = 1A @ Tj=125OC
3 IC = 2A @ Tj=25OC
IC = 1A @ Tj=25OC
2
0 5 10 15 20
hFE, FORCED GAIN
Figure 11. Induction Storage Time
©2000 Fairchild Semiconductor International
2000
1000
f = 1MHz
Cib
100
Cob
10
1
10 100
REVERSE VOLTAGE [V]
Figure 8. Collector Output Capacitance
10
VCC = 250V
IC = 5IB1 = 2.5IB2
tSTG
1
0.1
tF
0.01
0.2
1
IC[A], COLLECTOR CURRENT
Figure 10. Switching Time
10
2000
1500
IBon = IBoff
VCC = 15V
VZ = 300V
LC = 200µH
IC = 2A @ Tj=125OC
1000
500
IC = 1A @ Tj=125OC
IC = 2A @ Tj=25OC
IC = 1A @ Tj=25OC
0
2 4 6 8 10 12 14 16 18 20
hFE, FORCED GAIN
Figure 12. Inductive Crossover Time
Rev. A, February 2000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet KSC5338DW.PDF ] | |
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