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Numéro de référence | KSC5338D | ||
Description | High Voltage Power Switch Switching Application | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
KSC5338D/KSC5338DW
High Voltage Power Switch Switching
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D2-PAK
Equivalent Circuit
C
B
D2-PAK
1
TO-220
E1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
IBP *Base Current (Pulse)
PC Power Dissipation(TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Value
1000
450
12
5
10
2
4
75
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
TL Maximun Lead Temperature for Soldering
Rating
1.65
62.5
270
Unit
°C/W
°C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Pages | Pages 8 | ||
Télécharger | [ KSC5338D ] |
No | Description détaillée | Fabricant |
KSC5338 | High Voltage Power Switch Switching Application | Fairchild Semiconductor |
KSC5338D | High Voltage Power Switch Switching Application | Fairchild Semiconductor |
KSC5338DW | High Voltage Power Switch Switching Application | Fairchild Semiconductor |
KSC5338F | High Voltage Power Switch Switching Application | Fairchild Semiconductor |
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