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PDF KSC5042 Data sheet ( Hoja de datos )
| Número de pieza | KSC5042 | |
| Descripción | High Voltage Switchihg Dynamic Focus Application | |
| Fabricantes | Fairchild Semiconductor | |
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KSC5042
High Voltage Switchihg Dynamic Focus
Application
• High Collector-Emitter Breakdown Voltage : BVCEO=900V
• Small Cob =2.8pF(Typ.)
• Wide S.O.A
• High reliability
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
1500
900
5
100
300
10
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE *DC Current Gain
VCE (sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter Saturation Voltage
Cob Output Capacitance
* Pulse test: PW = 300µs, Duty Cycle = 2% pulsed
IC=1mA, IE = 0
IC=5mA, IB = 0
IE=1mA, IC = 0
VCB=900V, IE = 0
VEB=4V, IC = 0
VCE=5V, IC = 10mA
IC=20mA, IB = 4mA
IC=20mA, IB = 4mA
VCB=100V, f = 1MHz
Min.
1500
900
5
30
Typ.
2.8
Max.
10
10
Units
V
V
V
µA
µA
5V
2V
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC5042.PDF ] | |
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