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PDF KSC5019 Data sheet ( Hoja de datos )
| Número de pieza | KSC5019 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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Low Saturation
• VCE(sat)=0.5V at IC=2A, IB=50mA
KSC5019
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤30%
Value
30
30
10
6
2
5
2
750
150
-55 ~ 150
Units
V
V
V
V
A
A
A
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
BVCEO
BVEBO
hFE1
hFE2
VCE (sat)
VBE (on)
fT
Cob
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
VCB=30V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0
IE=1mA, IC=0
VCE=1V, IC=0.5A
VCE=1V, IC=2A
IC=2A, IB=50mA
VCE=1V, IC=2A
VCE=1V, IC=0.5A
VCB=10V, IE=0, f=1MHz
Min.
10
6
140
70
Typ.
200
0.2
0.86
150
27
Max.
100
100
600
Units
nA
nA
V
V
0.5 V
1.5 V
MHz
pF
hFE Classification
Classification
hFE
L
140 ~ 240
M
200 ~ 330
N
300 ~ 450
P
420 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC5019.PDF ] | |
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