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Fairchild Semiconductor - Power Amplifier Applications

Numéro de référence KSC3296
Description Power Amplifier Applications
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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KSC3296 fiche technique
KSC3296
Power Amplifier Applications
• Complement to KSA1304
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
150
150
5
1.5
0.5
20
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cob
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
VCB = 120V, IE = 0
VEB = 5V, IC = 0
VCE = 10V, IC = 500mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 500mA
VCE = 10V, IC = 500mA
VCB = 10V, f = 1MHz
Min.
40
0.65
Typ.
75
0.75
4
35
Max.
10
10
140
1.5
0.85
Units
µA
µA
V
V
MHz
pF
©2000 Fairchild Semiconductor International
Rev. A, February 2000

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