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PDF KSC2982 Data sheet ( Hoja de datos )
| Número de pieza | KSC2982 | |
| Descripción | Strobe Flash & Medium Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSC2982
Strobe Flash & Medium Power Amplifier
• Excellent hFE Linearity : hFE1=140 ~ 600
• Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V
• Collector Dissipation : PC=1~2W in Mounted on Ceramic Board
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current (DC)
IBP * Base Current (Pulse)
PC Collector Power Dissipation
PC*
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤30%
Mounted on Ceramic Board (250mm2x0.8mm)
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE (sat)
VBE (on)
fT
Cob
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10mA, IB=0
IE=1mA, IC=0
VCB=30V, IE=0
VBE=6V, IC=0
VCE=1V, IC=0.5A
VCE=1V, IC=2A
IC=2A, IB=50mA
VCE=1V, IC=2A
VCE=1V, IC=2A
VCB=10V, IE=0, f=1MHz
hFE1 Classification
Classification
hFE1
A
140 ~ 240
Marking
B
200 ~ 330
1 SOT-89
1. Base 2. Collector 3. Emitter
Value
30
30
10
6
2
4
0.4
0.8
500
1,000
150
-55 ~ 150
Units
V
V
V
V
A
A
A
A
mW
mW
°C
°C
Min.
10
6
140
70
Typ.
140
0.2
0.86
150
27
Max.
100
100
600
0.5
1.5
Units
V
V
nA
nA
V
V
MHz
pF
C
300 ~ 450
D
420 ~ 600
©2003 Fairchild Semiconductor Corporation
SSX
hFE grade
Rev. A3, February 2003
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC2982.PDF ] | |
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