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PDF KSC2310 Data sheet ( Hoja de datos )
| Número de pieza | KSC2310 | |
| Descripción | High Voltage Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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KSC2310
High Voltage Power Amplifier
• Collector-Base Voltage : VCBO=200V
• Current Gain Bandwidth Product : fT=100MHz
1 TO-92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
200
150
5
50
800
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE (sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=100µA, IE=0
IC=5mA, IB=0
IE=100µA, IC=0
VCB=200V, IE=0
VCE=5V, IC=10mA
IC=10mA, IB=1mA
VCE=30V, IC=10mA
VCB=10V, IE=0, f=1MHz
Min.
200
150
5
40
Typ.
100
3.5
Max.
0.1
240
0.5
5
Units
V
V
V
µA
V
MHz
pF
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC2310.PDF ] | |
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