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PDF KSC2001 Data sheet ( Hoja de datos )
| Número de pieza | KSC2001 | |
| Descripción | General Purpose Applications | |
| Fabricantes | Fairchild Semiconductor | |
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KSC2001
General Purpose Applications
• High hFE and Low VCE (sat)
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
5
700
150
600
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VBE (on) * Base Emitter On Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
* DC Current Gain
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
* Pulse test: PW≤350µs, Duty cycle≤2%
VCE=6V, IC=10mA
VCB=30V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=700mA, IB=70mA
IC=700mA, IB=70mA
VCB=6V, IE=0, f=1MHz
VCE=6V, IC=10mA
Min.
600
90
50
50
Typ.
640
200
140
0.2
0.95
13
170
Max.
700
100
100
400
Units
mV
nA
nA
0.6 V
1.2 V
25 pF
MHz
hFE Classification
Classification
hFE1
O
90 ~ 180
Y
135 ~ 270
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KSC2001.PDF ] | |
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