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PDF KSB907 Data sheet ( Hoja de datos )
| Número de pieza | KSB907 | |
| Descripción | Power Amplifier Applications | |
| Fabricantes | Fairchild Semiconductor | |
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KSB907
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Built-in Damper Diode at E-C
• Darlington TR
• Complement to KSD1222
1 I-PACK
1. Base 2. Collector 3. Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
- 60
- 40
-5
-3
- 0.3
15
1
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tON
tSTG
tF
Collector- Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
IC = - 25mA, IB = 0
VCB = - 60V, IE = 0
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 1A
VCE = - 2V, IC = - 3A
IC = - 2A, IB = - 4mA
IC = - 2A, IB = - 4mA
VCC = - 30V, IC = - 3A
IB1 = - IB2 = - 6mA
RL = 10Ω
Min. Typ. Max. Units
- 40 V
- 20 µA
- 2.5 µA
2000
1000
- 1.5
V
-2 V
0.3 µs
0.6 µs
0.25 µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSB907.PDF ] | |
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