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KSB1151 fiches techniques PDF

Fairchild Semiconductor - Low Collector-Emitter Saturation Voltage Large Collector Current

Numéro de référence KSB1151
Description Low Collector-Emitter Saturation Voltage Large Collector Current
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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KSB1151 fiche technique
KSB1151
Feature
• Low Collector-Emitter Saturation Voltage
• Large Collector Current
• High Power Dissipation : PC=1.3W (Ta=25°C)
• Complement to KSD 1691
1 TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current
PC Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* PW10ms, Duty Cycle50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
hFE3
* DC Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(sat) * Base-Emitter Saturation Voltage
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW350µs, Duty Cycle2% Pulsed
VCB = - 50V, IE = 0
VEB = - 7V, IC = 0
VCE = - 1V, IC = - 0.1A
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
IC = - 2A, IB = - 0.2A
IC = - 2A, IB = - 0.2A
VCC = - 10V, IC = - 2A
IB1 = - IB2 =0.2A
RL = 5
hFE Classification
Classification
hFE2
O
100 ~ 200
Y
160 ~ 320
Value
- 60
- 60
-7
-5
-8
-1
1.3
20
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
60
100
50
Typ.
200
- 0.14
- 0.9
0.15
0.78
0.18
Max.
- 10
- 10
400
- 0.3
- 1.2
1
2.5
1
Units
µA
µA
V
V
µs
µs
µs
G
200 ~ 400
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003

PagesPages 5
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